Publications

2021

  1. Lauren N McCabe, and Joshua M. O. Zide. "Techniques for epitaxial site-selective growth of quantum dots." Journal of Vacuum Science & Technology A, 39, 010802. (2021). https://doi.org/10.1116/6.0000623

2020

  1. Xiangyu Ma, Yuejing Wang, Joshua Zide, and Matthew Doty. "Three-Electrode Device for Applying Two-Dimensional Vector Electric Fields to Single InAs Quantum Dots." Physical Review Applied, 13, 064029. (2020). https://dx.doi.org/10.1103/PhysRevApplied.13.064029

  2. Yuejing Wang, James Bork, Stephanie Law, and Joshua M. O. Zide. "Improved epitaxial growths of TbAs film on III-V semiconductors." Journal of Vacuum Science and Technology A, 38, 033405. (2020). https://doi.org/10.1116/1.5144999

  3. Lauren N. McCabe, Yuejing Wang, Matthew F. Doty, and Joshua M. O. Zide. "Low-density patterned InAs quantum dot arrays." Journal of Vacuum Science & Technology B, 38, 022803 (2020). https://dx.doi.org/10.1116/1.5145205

  4. Yuejing Wang, Dongxia Wei, Patrick Sohr, Joshua M. O. Zide, and Stephanie Law. "Extending the Tunable Plasma Wavelength in III-V Semiconductors from Mid-Infrared to the Short-Wave Infrared by Embedding Self-Assembled ErAs Nanostructures in GaAs." Advanced Optical Materials, 1900937. (2020). https://dx.doi.org/10.1002/adom.201900937

2019

  1. Bo E. Tew, Yuying Zhang, Areej Shahid, Matthew R. Lewis, Chaoying Ni, and Joshua M. O. Zide. "Growth and Thermal Characterization of TbAs Nanoparticles Grown by Inert Gas Condensation." Journal of Electronic Materials, 491, 566. (2019). https://dx.doi.org/10.1007/s11664-019-07737-y

  2. Jing Zhang, Yuejing Wang, Shoaib Khalid, Anderson Janotti, Greg Haugstad, and Joshua M. O. Zide. "Strong band gap reduction in highly mismatched alloy InAlBiAs grown by molecular beam epitaxy." Journal of Applied Physics, 126, 095704. (2019). https://dx.doi.org/10.1063/1.5097846

  3. Jing Zhang, Eric Y. Chen, Matthew F. Doty, and Joshua M. O. Zide. "Sensitivity analysis of the theoretical performance of semiconductor upconversion nanostructures." Journal of Applied Physics, 126, 044301. (2019). https://dx.doi.org/10.1063/1.5095817

  4. Eric Y. Chen, Christopher Milleville, Joshua M. O. Zide, Matthew F. Doty, and Jing Zhang. "Upconversion of low-energy photons in semiconductor nanostructure for solar energy harvesting." MRS Energy and Sustainability, 5, E16. (2019). https://dx.doi.org/10.1557/mre.2018.15

  5. Bo E. Tew, Matthew R. Lewis, Chun-Yen Hsu, Chaoying Ni, and Joshua M. O. Zide. "Growth of ErAs:GaAs Nanocomposite by Liquid Phase Epitaxy." Journal of Crystal Growth, 518, 34-38. (2019). https://doi.org/10.1016/j.jcrysgro.2019.04.025

  6. Bo E. Tew, Pratyusha Vempati, Laura E. Clinger, Cory C. Bomberger, Nicole I. Halaszynski, Tela Favaloro, Jae H. Seol, Joseph P. Feser, Arun Majumdar, Ali Shakouri, John E. Bowers, Je-Hyeong Bahk, and Joshua M. O. Zide. “High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material.” Advanced Electronic Materials, 5, 1900015, (2019). https://doi.org/10.1002/aelm.201900015

  7. Matthew R. Lewis, Bo. E. Tew, and Joshua M. O. Zide. “Formation of ErAs Nanoparticles by Pulsed Laser Ablation of Pressed Powder Targets.” Journal of Electronic Materials, 48, 3370, (2019). https://doi.org/10.1007/s11664-018-06902-z

  8. Etienne Gagnon, Amy Lytle, Charles Jabbour, and Joshua M. O. Zide. "Simulating nanoisland layers in THz detectors using a Monte Carlo method." Journal of Applied Physics, 125, 034501. (2019). https://dx.doi.org/10.1063/1.5063568

2018

  1. Christopher C. Milleville, Eric Y. Chen, Kyle R. Lennon, Jill M. Cleveland, Abinah Kumar, Jing Zhang, James A. Bork, Ansel Tessier, James M. LeBeau, D. Bruce Chase, Joshua M. O. Zide, and Matthew F. Doty. “Engineering Efficient Photon Upconversion in Semiconductor Heterostructures.” ACS Nano, 13, 489. (2018). https://dx.doi.org/10.1021/acsnano.8b07062

  2. Abhishek Iyer, James Hack, David Alejandro Angel Trujillo, Bo Tew, Joshua Zide, and Robert Opila. "Effects of Co-Solvents on the Performance of PEDOT:PSS Films and Hybrid Photovoltaic Devices." Applied Sciences, 8, 2052. (2018). https://doi.org/10.3390/app8112052

  3. Matthew R. Lewis, Roddel A. Remy, Bo E. Tew, and Joshua M. O. Zide. "Size dependent arsenic volatilization in ErAs nanoparticle powders." Applied Physics Letters, 113, 163105. (2018). https://doi.org/10.1063/1.5048191

  4. Eric Y. Chen, Zhuohui Li, Christopher C. Milleville, Kyle R. Lennon, Joshua M. O. Zide, and Matthew F. Doty. "CdSe(Te)/CdS/CdSe Rods Versus CdTe/CdS/CdSe Spheres: Morphology-Dependent Carrier Dynamics for Photon Upconversion." IEEE Journal of Photovoltaics, 8, 746-751. (2018). http://dx.doi.org/10.1109/JPHOTOV.2018.2815710

2017

  1. Cory C. Bomberger, Matthew R. Lewis, Laura R. Vanderhoef, Matthew F. Doty, and Joshua M. O. Zide. "Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors." Journal of Vacuum Science and Technology B, 35, 030801. (2017). http://dx.doi.org/10.1116/1.4979347

  2. Henry Aldridge, Jr, Aaron G. Lind, Cory C. Bomberger, Yevgeniy Puzyrev, Joshua M. O. Zide, Sokrates T. Pantelides, Mark E. Law, and Kevin S. Jones. "N-type doping strategies for InGaAs." Materials Science in Semiconductor Processing, 62, 171-179. (2017). http://dx.doi.org/10.1016/j.mssp.2016.12.017

2016

  1. Cory C. Bomberger, Bo E. Tew, Matthew R. Lewis, and Joshua M. O. Zide. "Growth and characterization of TbAs films." Applied Physics Letters, 109, 202104. (2016). http://dx.doi.org/10.1063/1.4967841

  2. Cory C. Bomberger, Jesus Nieto-Pescador, Matthew R. Lewis, Bo E. Tew, Yuejing Wang, D. Bruce Chase, Lars Gundlach, and Joshua M. O. Zide. "Growth and Characterization of ErAs:GaBiXAs1-X." Applied Physics Letters, 109, 172103. (2016). http://dx.doi.org/10.1063/1.4966550

  3. Matthew Lewis, Kevin Bichoupan, S. Ismat Shah, and Joshua M. O. Zide. "Growth of ErAs Nanoparticles by Pulsed Laser Ablation in an Inert Environment." Journal of Electronic Materials, 45, 6247. (2016). http://dx.doi.org/10.1007/s11664-016-4775-z

  4. Henry Aldridge, Jr., Aaron G. Lind, Cory C. Bomberger, Yevgeniy Puzyrev, Christopher Hatem, Russell M. Gwilliam, Joshua M. O. Zide, Sokrates T. Pantelides, Mark E. Law, and Kevin S. Jones. "Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As." Journal of Electronic Materials 45, 8, pp. 4282-4287. (2016). http://dx.doi.org/10.1007/s11664-016-4616-0.

  5. Diane G. Sellers, Jing Zhang, Eric Y. Chen, Yujun Zhong, Matthew F. Doty, and Joshua M. O. Zide. "Novel nanostructures for efficient photon upconversion and high-efficiency photovoltaics." Solar Energy Materials and Solar Cells, 155, p. 446-453. (2016). doi:10.1016/j.solmat.2016.06.043

  6. Eric Y. Chen, Jing Zhang, Diane G. Sellers, Yujun Zhong, Joshua M. O. Zide, and Matthew F. Doty. A Kinetic Rate Model of Novel Upconversion Nanostructures for High-Efficiency Photovoltaics." IEEE Journal of Photovoltaics, PP, 99 1-8 (2016).10.1109/JPHOTOV.2016.2567101

  7. D. Wei, C. Harris, C. C. Bomberger, J. Zhang, J. Zide, and S. Law. "Single-materials semiconductor hyperbolic metamaterials." Optics Express, 24, 8, 8735 (2016). http://dx.doi.org/10.1364/OE.24.008735

  8. A. G. Lind, H. L. Aldridge Jr., C. C. Bomberger, C. Hatem, J. M. O. Zide, and K. S. Jones. "Fermi-level effects on extended defect evolution in Si+ and P+ implanted In0.53Ga0.47As." ECS Journal of Solid State Science and Technology, 5, 4, P3073-3077 (2016). http://dx.doi.org/10.1149/2.0141604jss

2015

  1. G. M. T. Chai, C. A. Broderick, E. P. O'Reilly, Z. Othaman, S. R. Jin, J. P. Petropoulos, Y. Zhong, P. B. Dongmo, J. M. O. Zide, S. J. Sweeney, and T. J. C. Hosea. "Experimental and modeling study of InGaBiAs/InP alloys with up to 5.8% Bi, and withΔso > Eg." Semiconductor Science and Technology, 30, 094015. (2015). http://dx.doi.org/10.1088/0268-1242/30/9/094015

  2. Cory C. Bomberger, Laura R. Vanderhoef, Abdur Rahman, Deesha Shah, D. Bruce Chase, Antoinette J. Taylor, Abul K. Azad, Matthew F. Doty and Joshua M. O. Zide. "Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As." Applied Physics Letters 107, 102103. (2015). http://dx.doi.org/10.1063/1.4930816

  3. A. G. Lind, H. L. Aldridge, Jr., C. C. Bomberger, C. Hatem, J. M. O. Zide, and K. S. Jones. "Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As." Journal of Vacuum Science & Technology B, 33, 021206. (2015). http://dx.doi.org/10.1116/1.4914319

  4. D. G. Sellers, S. J. Polly, Y. Zhong, S. M. Hubbard, J. M. O. Zide, and M. F. Doty. "New Nanostructured Materials for Efficient Photon Upconversion." IEEE Journal of Photovoltaics, 5, 224. (2015). http://dx.doi.org/10.1109/JPHOTOV.2014.2367865

2014

  1. P.B. Dongmo, M. Hartshorne, T. R. Cristiani, M. L. Jablonski, C. C. Bomberger, D. Isheim, D. N. Seidman, M. Taheri, and J. M. O. Zide. “Observation of Self-Assembled Core-Shell Structures in Epitaxially-Embedded TbErAs Nanoparticles.” small, 10, 4290. (2014). http://dx.doi.org/10.1002/smll.201400891

  2. C. R. Haughn, E. H. Steenbergen, L. J. Bissell, E. Y. Chen, K. G. Eyink, J. M. O. Zide, and M. F. Doty, "Carrier transfer from InAs quantum dots to ErAs metal nanoparticles." Applied Physics Letters, 105, 103108. (2014). http://dx.doi.org/10.1063/1.4895519

  3. L. R. Vanderhoef, A. K. Azad, C. C. Bomberger, D. R. Chowdhury, D. B. Chase, A. J. Taylor, J. M. O. Zide, and M. F. Doty, "Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy." Physical Review B, 89, 045418. (2014). http://dx.doi.org/10.1103/PhysRevB.89.045418

2013

  1. Yujun Zhong, Pernell Dongmo, Joshua Zide, "Dilute Bismuthides on an InP Platform." (book chapter) Bismuth-Containing Compounds, Springer Series in Materials Science, Volume 186, pp. 89-116). (2013). http://dx.doi.org/10.1007/978-1-4614-8121-8_4

  2. P. M. Attia, M. R. Lewis, C. C. Bomberger, A. K. Prasad, J. M. O. Zide, "Experimental studies of thermoelectric power generation in dynamic temperature environments." Energy, 60, 453. (2013). http://dx.doi.org/10.1016/j.energy.2013.08.046

  3. Y. Zhong, P. B. Dongmo, L. Gong, S. Law, D. B. Chase, D. Wasserman, and J. M. O. Zide, "Degenerately doped InGaBIAs:Si as a highly conductive and transparent contact material in the infrared range." Optical Materials Express, 3, 1197. (2013). http://dx.doi.org/10.1364/OME.3.001197.

  4. P. Jha, T. D. Sands, P. Jackson, C. Bomberger, T. Favaloro, S. Hodson, J. M. O. Zide, X. Xu, and A. Shakouri, "Cross-plane thermoelectric transport in p-type La0.67Sr0.33MnO3/LaMnO3 oxide metal/semiconductor superlattices." Journal of Applied Physics, 113, 193702 (2013). http://dx.doi.org/10.1063/1.4804937

  5. C. R. Haughn, K. J. Schmieder, J. M. O. Zide, A. Barnett, C. Ebert, R. Opila, and M. F. Doty, "Quantification of trap state densities in GaAs heterostructures grown at varying rates using intensity-dependent time resolved photoluminescence." Applied Physics Letters 102, 182108 (2013). http://dx.doi.org/10.1063/1.4802841

  6. Cory C. Bomberger, Peter M. Attia, Ajay K. Prasad, Joshua M. O. Zide, "Modeling passive power generation in a temporally-varying temperature environment via thermoelectrics." Applied Thermal Engineering 56, 1-2, 152 (2013). http://dx.doi.org/10.1016/j.applthermaleng.2013.02.039

2012

  1. I. Marko, Z. Batool , K. Hild , S. Jin , N. Hossain , T. J. C. Hosea , J. P. Petropoulos , Y. Zhong , P. B. Dongmo , J. M. O. Zide , S. J. Sweeney, "Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications." Applied Physics Letters 101, 221108 (2012). http://dx.doi.org/10.1063/1.4768532

  2. R. Kudrawiec, J. Kopaczek, J. Misiewicz, W. Walukiewicz, J. P. Petropoulos, Y. Zhong, P. B. Dongmo, and J. M. O. Zide, "Temperature dependence of E0 and E0+ ΔSO transitions in In0.53Ga0.47BixAs1-x alloys studied by photoreflectance." Journal of Applied Physics 112, 113508 (2012). http://dx.doi.org/10.1063/1.4768262

  3. P. B. Dongmo, Y. Zhong, P. Attia, C. Bomberger, R. Cheaito, J. F. Ihlefeld, P. E. Hopkins, and J. M. O. Zide, "Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs." Journal of Applied Physics, 112, 093710 (2012). http://dx.doi.org/10.1063/1.4761996

  4. P. Jha, T. D. Sands, L. Cassels, P. Jackson, T. Favaloro, B. Kirk, J. M. O. Zide, X. Xu, and A. Shakouri, "Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices." Journal of Applied Physics, 112, 064714 (2012). http://dx.doi.org/10.1063/1.4754514

  5. L. E. Clinger, G. Pernot, T. E. Buehl, A. C. Gossard, C. J. Palmstrøm, A. Shakouri, and J. M. O. Zide, "Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites." Journal of Applied Physics, 111, 094312 (2012). http://dx.doi.org/10.1063/1.4711095

  6. Y. Zhong, P. B. Dongmo, J. P. Petropoulos, J. M. O. Zide, “Effects of molecular beam epitaxial growth conditions on composition and optical properties of InGaBiAs.” Applied Physics Letters, 100, 112110 (2012). http://dx.doi.org/10.1063/1.3695066

  7. A. T. Ramu, L. E. Clinger, P. B. Dongmo, J. T. Imamura, J. M. O. Zide, and J. E. Bowers. “Incompatability of standard III-V compound semiconductor processing techniques with terbium doped InGaAs of high terbium concentration,” Journal of Vacuum Science and Technology A, 30, 031508 (2012) http://dx.doi.org/10.1116/1.3701951.

  8. E. Selezneva, L. Cassels, A. Ramu, G. Pernot, T. Buehl, T. Favaloro, J. Bahk, Z. Bian, J. Bowers, J. Zide, and A. Shakouri. “Thermoelectric transport in InGaAs with high concentration of rare-earth TbAs embedded nanoparticles.” Journal of Electronic Materials, 41, 1820. (2012). http://dx.doi.org/10.1007/s11664-012-2097-3.

2011

  1. R. Kudrawiec, J. Kopaczek, J. Misiewicz, J. P. Petropoulos, Y. Zhong, and J. M. O. Zide, “Contactless electroreflectance study of E and E0SO transitions in In0.53Ga0.47BiXAs1-X alloys,” Applied Physics Letters, 99, 251906. (2011). http://dx.doi.org/10.1063/1.3669703

  2. D. O. Klenov and J. M. O. Zide, “Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy,” Applied Physics Letters 99, 141904 (2011). http://dx.doi.org/10.1063/1.3645632

  3. J. P. Petropoulos, Y. Zhong, P. B. Dongmo, and J. M. O. Zide, “Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material,” Applied Physics Letters, 99 031110 (2011). http://dx.doi.org/10.1063/1.3614476

  4. L. E. Cassels, T. E. Buehl, P. G. Burke, C. J. Palmstrøm, A. C. Gossard, G. Pernot, A. Shakouri, C. R. Haughn, M. F. Doty, and J. M. O. Zide, “Growth and characterization of TbAs:GaAs nanocomposites,” Journal of Vacuum Science and Technology B, 29, 03C114 (2011). http://dx.doi.org/10.1116/1.3555388

  5. J. P. Petropoulos, T. R. Cristiani, P. B. Dongmo, and J. M. O. Zide, “A simple thermodynamic model for the doping and alloying of nanoparticles,” Nanotechnology, 22, 245704 (2011). http://dx.doi.org/10.1088/0957-4484/22/24/245704

  6. V. D. Dasika, A. V. Semichaevsky, J. P. Petropoulos, J. C. Dibbern, A. M. Dangelewicz, M. Holub, P. K. Bhattacharya, J. M. O. Zide, H. T. Johnson, and R. S. Goldman, “Influence of Mn dopants on InAs/GaAs quantum dot electronic states,” Applied Physics Letters, 98, 141907. (2011). http://dx.doi.org/10.1063/1.3567510

  7. A. T. Ramu, L. E. Cassels, N. H. Hackman, H. Lu, J. M. O. Zide, J. E. Bowers, “Thermoelectric transport in the Coupled Valence-Band Model,” Journal of Applied Physics, 109, 033704. (2011). http://dx.doi.org/10.1063/1.3537826

2010

  1. J. M. O. Zide, J.-H. Bahk, R. Singh, M. Zebarjadi, G. Zeng, H. Lu, J. P. Feser, D. Xu, S. L. Singer, Z.X. Bian, A. Majumdar, J. E. Bowers, A. Shakouri, and A. C. Gossard,” “High efficiency semimetal/semiconductor nanocomposite thermoelectric materials.” Journal of Applied Physics, 108, 123702. (2010). http://dx.doi.org/10.1063/1.3514145

  2. K. J. Russell, F. Capasso, V. Narayanamurti, H. Lu, J. M. O. Zide, A. C. Gossard, “Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport,” Physical Review B, 82, 115322 (2010) http://dx.doi.org/10.1103/PhysRevB.82.115322

  3. J.-H. Bahk, G.H. Zeng, J. M. O. Zide, H. Lu, R. Singh, D. Liang, A.T. Ramu, P. Burke, Z.X. Bian, A.C. Gossard, A. Shakouri, and J. E. Bowers, “High-temperature thermoelectric characterization of III-V semiconductor thin films by oxide binding,” Journal of Electronic Materials, 39, 1125 (2010). http://dx.doi.org/10.1007/s11664-010-1258-5

  4. J.-H. Bahk, Z. X. Bian, M. Zebarjadi, J. M. O. Zide, H. Lu, D. Xu, J. P. Feser, G. Zeng, A. Majumdar, A. C. Gossard, A. Shakouri, J. E. Bowers, “Thermoelectric Figure of Merit of InGaAlAs III-V semiconductor alloys,” Physical Review B, 81, 235209 (2010). http://dx.doi.org/10.1103/PhysRevB.81.235209

  5. A.T. Ramu, L. E. Cassels, N. H. Hackman, H. Lu, J. M. O. Zide, J. E. Bowers, “Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials,” Journal of Applied Physics, 107, 083707 (2010). http://dx.doi.org/10.1063/1.3366712

2009

  1. M. Zebarjadi, K. Esfarjani, A. Shakouri, J. Bahk, Z. Bian, G. Zeng, J. Bowers, H. Lu, J. Zide, and A. Gossard, "Effect of nanoparticle scattering on thermoelectric power factor," Applied Physics Letters, 94, 202105 (2009). http://dx.doi.org/10.1063/1.3132057

  2. Y.K. Koh, S.L. Singer, W. Kim, J.M. Zide, H. Lu, D.G. Cahill, A. Majumdar, and A.C. Gossard, "Comparison of the 3ω method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors," Journal of Applied Physics, 105, 054303 (2009). http://dx.doi.org/10.1063/1.3078808

  3. R. Singh, Z. Bian, A. Shakouri, G. Zeng, J. Bahk, J.E. Bowers, J.M. Zide, and A.C. Gossard, "Direct measurement of thin-film thermoelectric figure of merit," Applied Physics Letters, 94, 212508 (2009). http://dx.doi.org/10.1063/1.3094880

  4. M. Zebarjadi, K. Esfarjani, A. Shakouri, Z.X. Bian, J. Bahk, G. Zeng, J. Bowers, H. Lu, J. Zide, and A. Gossard, "Effect of Nanoparticles on Electron and Thermoelectric Transport," Journal of Electronic Materials, 38, 954 (2009). http://dx.doi.org/10.1007/s11664-008-0656-4

  5. E.R. Brown, K. Williams, W. Zhang, J.Y. Suen, H. Lu, J. Zide, and A.C. Gossard, "Electrical Transport in a Semimetal–Semiconductor Nanocomposite," IEEE Transactions on Nanotechnology, 8, 402 (2009). http://dx.doi.org/10.1109/TNANO.2008.2011764

  6. J. Lim, W. Lee, H. Sim, R.D. Averitt, J.M. Zide, A.C. Gossard, and J. Ahn, "Effect of nonuniform continuum density of states on a Fano resonance in semiconductor quantum wells," Physical Review B, 80, 035322 (2009). http://dx.doi.org/10.1103/PhysRevB.80.035322

2008

  1. G. Zeng, J. Bahk, J.E. Bowers, H. Lu, J.M. Zide, A.C. Gossard, R. Singh, Z. Bian, A. Shakouri, S.L. Singer, W. Kim, and A. Majumdar, "Power Generator Modules of Segmented Bi2Te3 and ErAs:(InGaAs)1−x (InAlAs)x," Journal of Electronic Materials, 37, 1786 (2008). http://dx.doi.org/10.1007/s11664-008-0435-2

  2. W. Kim, S.L. Singer, A. Majumdar, J.M. Zide, D. Klenov, A.C. Gossard, and S. Stemmer, "Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures. " Nano Letters, 8, 2097 (2008). http://dx.doi.org/10.1021/nl080189t

  3. A. Azad, R. Prasankumar, D. Talbayev, A. J. Taylor, J. F. O’Hara, R. D. Averitt, J. M. O. Zide, H. Lu, A. C. Gossard. “Carrier dynamics in InGaAs with embedded ErAs nanoislands.” Applied Physics Letters, 93, 121108 (2008). http://dx.doi.org/10.1063/1.2989127

  4. H.-T. Chen, S. Palit, T. Tyler, C. M. Bingham, J. M. O. Zide, J. F. O’Hara, D. R. Smith, A. C. Gossard, R. D. Averitt, W. J. Padilla, N. M. Jokerst, A. J. Taylor. “Hybrid metamaterials enable fast electrical modulation of freely propogating terahertz waves.” Applied Physics Letters, 93, 091117 (2008). http://dx.doi.org/10.1063/1.2978071

  5. M. A. Scarpulla, J. M. O. Zide, J. M. LeBeau, C. G. Van de Walle, A. C. Gossard, and K. T. Delaney. “Near-infrared absorption and semimetal-semiconductor transitions in 2 nm ErAs nanoparticles embedded in GaAs and AlAs.” Applied Physics Letters, 92, 173116 (2008). http://dx.doi.org/10.1063/1.2908213

2007

  1. G. Zeng, J.-H. Bahk, J. E. Bowers, J. M. O. Zide, A. C. Gossard, Z. X. Bian, R. Singh, and A. Shakouri. “ErAs:(InGaAs)1-x(InAlAs)x alloy power generator modules.” Applied Physics Letters, 91, 263510 (2007). http://dx.doi.org/10.1063/1.2828042

  2. Z. X. Bian, M. Zebarjadi, R. Singh, Y. Ezzahri, A. Shakouri, G. Zeng, J.-H. Bahk, J. E. Bowers, J. M. O. Zide, and A. C. Gossard. “Cross-plane Seebeck coefficient and Lorenz number in superlattices.” Physical Review B, 76, 205311 (2007). http://dx.doi.org/10.1103/PhysRevB.76.205311

  3. H.-T. Chen, W. J. Padilla, J. M O. Zide, S. R. Bank, A. C. Gossard, A. J. Taylor, and R. D. Averitt. “Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices.” Optics Letters, 32, 1620 (2007). http://dx.doi.org/10.1364/OL.32.001620

  4. W. Yi, V. Narayanamurti, J. M. O. Zide, S. R. Bank, and A. C. Gossard. “Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection.” Physical Review B, 75, 115333. (2007). http://dx.doi.org/10.1103/PhysRevB.75.115333

  5. M. P. Hanson, S. R. Bank, J. M. O. Zide, J. D. Zimmerman, and A. C. Gossard. “Controlling electronic properties of epitaxial nanocomposites of dissimilar materials.” Journal of Crystal Growth, 301-302. 4-9. (2007). http://dx.doi.org/10.1016/j.jcrysgro.2006.11.250

  6. D. O. Klenov, J. M. O. Zide, J. M. LeBeau, A. C. Gossard, and S. Stemmer. “Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers.” Applied Physics Letters, 90, 121917. (2007). http://dx.doi.org/10.1063/1.2715174

  7. G. Zeng, J. M. O. Zide, W. Kim, J. E. Bowers, A. C. Gossard, Z. X. Bian, Y. Zhang, A. Shakouri, S. L. Singer, and A. Majumdar. “Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattice.” Journal of Applied Physics, 101, 034502 (2007) http://dx.doi.org/10.1063/1.2433751

2006

  1. J. M. O. Zide, D. Vashaee, Z. X. Bian, G. Zeng, J. E. Bowers, A. Shakouri, and A. C. Gossard. “Demonstration of electron filtering to increase the Seebeck coefficient in ErAs:InGaAs/InGaAlAs superlattices.” Physical Review B, 74, 205335 (2006). http://dx.doi.org/10.1103/PhysRevB.74.205335

  2. H. -T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt. “All Solid State Terahertz Metamaterial Devices.” Nature, 444, 597 (2006) http://dx.doi.org/10.1038/nature05343

  3. J. F. O'Hara, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt. “Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices.” Applied Physics Letters, 88, 251119 (2006). http://dx.doi.org/10.1063/1.2216026

  4. W. Kim, S. L. Singer, A. Majumdar, D. Vashaee, Z. X. Bian, A. Shakouri, G. Zeng, J. E. Bowers, J. M. O. Zide, and A. C. Gossard. “Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices.” Applied Physics Letters, 88, 242107 (2006). http://dx.doi.org/10.1063/1.2207829

  5. J. M. O. Zide, A. Kleiman-Shwarsctein, N. C. Strandwitz, J. D. Zimmerman, T. Steenblock-Smith, A. C. Gossard, A. Forman, A. Ivanovskaya, and G. D. Stucky. “ Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction.” Applied Physics Letters, 88, 162103 (2006). http://dx.doi.org/10.1063/1.2196059

  6. G. Zeng, J. E. Bowers, J. M. O. Zide, A. C. Gossard, W. Kim, S. Singer, A. Majumdar, R. Singh, Z. X. Bian, Y. Zhang, and A. Shakouri. “ErAs:InGaAs/InGaAlAs superlattice thin-film power generator array.” Applied Physics Letters, 88, 113502 (2006). http://dx.doi.org/10.1063/1.2186387

  7. W. Kim, J. M. O. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar. “Thermal Conductivity Reduction and Thermoelectric Figure of Merit Increase by Embedding Nanoparticles in Crystalline Semiconductors.” Physical Review Letters, 96, 045901 (2006). http://dx.doi.org/10.1103/PhysRevLett.96.045901

2005

  1. J. M. Zide, D. O. Klenov, S. Stemmer, A. C. Gossard, G. Zeng, J. E. Bowers, D. Vashaee, and A. Shakouri. “Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles.” Applied Physics Letters, 87, 112102 (2005). http://dx.doi.org/10.1063/1.2043241

  2. D. O. Klenov, J. M. Zide, J. D. Zimmerman, A. C. Gossard, and S. Stemmer. “Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs.” Applied Physics Letters, 86, 241901 (2005). http://dx.doi.org/10.1063/1.1947910

  3. R. P. Prasankumar, A. Scopatz, D. J. Hilton, A. J. Taylor, R. D. Averitt, J. M. Zide, and A. C. Gossard. “Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy.” Applied Physics Letters, 86, 201107 (2005). http://dx.doi.org/10.1063/1.1923174