Publications

    2018

  1. Matthew R. Lewis, Roddel A. Remy, Bo E. Tew, and Joshua M. O. Zide. "Size dependent arsenic volatilization in ErAs nanoparticle powders." Applied Physics Letters, 113, 163105. (2018). https://doi.org/10.1063/1.5048191
  2. Eric Y. Chen, Zhuohui Li, Christopher C. Milleville, Kyle R. Lennon, Joshua M. O. Zide, and Matthew F. Doty. "CdSe(Te)/CdS/CdSe Rods Versus CdTe/CdS/CdSe Spheres: Morphology-Dependent Carrier Dynamics for Photon Upconversion." IEEE Journal of Photovoltaics, 8, 746-751. (2018). http://dx.doi.org/10.1109/JPHOTOV.2018.2815710

    3. 2017

  3. Cory C. Bomberger, Matthew R. Lewis, Laura R. Vanderhoef, Matthew F. Doty, and Joshua M. O. Zide. "Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors." Journal of Vacuum Science and Technology B, 35, 030801. (2017). http://dx.doi.org/10.1116/1.4979347
  4. Henry Aldridge, Jr, Aaron G. Lind, Cory C. Bomberger, Yevgeniy Puzyrev, Joshua M. O. Zide, Sokrates T. Pantelides, Mark E. Law, and Kevin S. Jones. "N-type doping strategies for InGaAs." Materials Science in Semiconductor Processing, 62, 171-179. (2017). http://dx.doi.org/10.1016/j.mssp.2016.12.017

    5. 2016

  5. Cory C. Bomberger, Bo E. Tew, Matthew R. Lewis, and Joshua M. O. Zide. "Growth and characterization of TbAs films." Applied Physics Letters, 109, 202104. (2016). http://dx.doi.org/10.1063/1.4967841
  6. Cory C. Bomberger, Jesus Nieto-Pescador, Matthew R. Lewis, Bo E. Tew, Yuejing Wang, D. Bruce Chase, Lars Gundlach, and Joshua M. O. Zide. "Growth and Characterization of ErAs:GaBiXAs1-X." Applied Physics Letters, 109, 172103. (2016). http://dx.doi.org/10.1063/1.4966550
  7. Matthew Lewis, Kevin Bichoupan, S. Ismat Shah, and Joshua M. O. Zide. "Growth of ErAs Nanoparticles by Pulsed Laser Ablation in an Inert Environment." Journal of Electronic Materials, 45, 6247. (2016). http://dx.doi.org/10.1007/s11664-016-4775-z
  8. Henry Aldridge, Jr., Aaron G. Lind, Cory C. Bomberger, Yevgeniy Puzyrev, Christopher Hatem, Russell M. Gwilliam, Joshua M. O. Zide, Sokrates T. Pantelides, Mark E. Law, and Kevin S. Jones. "Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As." Journal of Electronic Materials 45, 8, pp. 4282-4287. (2016). http://dx.doi.org/10.1007/s11664-016-4616-0.
  9. Diane G. Sellers, Jing Zhang, Eric Y. Chen, Yujun Zhong, Matthew F. Doty, and Joshua M. O. Zide. "Novel nanostructures for efficient photon upconversion and high-efficiency photovoltaics." Solar Energy Materials and Solar Cells, 155, p. 446-453. (2016). doi:10.1016/j.solmat.2016.06.043
  10. Eric Y. Chen, Jing Zhang, Diane G. Sellers, Yujun Zhong, Joshua M. O. Zide, and Matthew F. Doty. A Kinetic Rate Model of Novel Upconversion Nanostructures for High-Efficiency Photovoltaics." IEEE Journal of Photovoltaics, PP, 99 1-8 (2016).10.1109/JPHOTOV.2016.2567101
  11. D. Wei, C. Harris, C. C. Bomberger, J. Zhang, J. Zide, and S. Law. "Single-materials semiconductor hyperbolic metamaterials." Optics Express, 24, 8, 8735 (2016). http://dx.doi.org/10.1364/OE.24.008735
  12. A. G. Lind, H. L. Aldridge Jr., C. C. Bomberger, C. Hatem, J. M. O. Zide, and K. S. Jones. "Fermi-level effects on extended defect evolution in Si+ and P+ implanted In0.53Ga0.47As." ECS Journal of Solid State Science and Technology, 5, 4, P3073-3077 (2016). http://dx.doi.org/10.1149/2.0141604jss

    13. 2015

  13. G. M. T. Chai, C. A. Broderick, E. P. O'Reilly, Z. Othaman, S. R. Jin, J. P. Petropoulos, Y. Zhong, P. B. Dongmo, J. M. O. Zide, S. J. Sweeney, and T. J. C. Hosea. "Experimental and modeling study of InGaBiAs/InP alloys with up to 5.8% Bi, and withΔso > Eg." Semiconductor Science and Technology, 30, 094015. (2015). http://dx.doi.org/10.1088/0268-1242/30/9/094015
  14. Cory C. Bomberger, Laura R. Vanderhoef, Abdur Rahman, Deesha Shah, D. Bruce Chase, Antoinette J. Taylor, Abul K. Azad, Matthew F. Doty and Joshua M. O. Zide. "Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As." Applied Physics Letters 107, 102103. (2015). http://dx.doi.org/10.1063/1.4930816
  15. A. G. Lind, H. L. Aldridge, Jr., C. C. Bomberger, C. Hatem, J. M. O. Zide, and K. S. Jones. "Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As." Journal of Vacuum Science & Technology B, 33, 021206. (2015).  http://dx.doi.org/10.1116/1.4914319
  16. D. G. Sellers, S. J. Polly, Y. Zhong, S. M. Hubbard, J. M. O. Zide, and M. F. Doty. "New Nanostructured Materials for Efficient Photon Upconversion." IEEE Journal of Photovoltaics, 5, 224. (2015). http://dx.doi.org/10.1109/JPHOTOV.2014.2367865

    17. 2014

  17. P.B. Dongmo, M. Hartshorne, T. R. Cristiani, M. L. Jablonski, C. C. Bomberger, D. Isheim, D. N. Seidman, M. Taheri, and J. M. O. Zide. “Observation of Self-Assembled Core-Shell Structures in Epitaxially-Embedded TbErAs Nanoparticles.” small, 10, 4290. (2014). http://dx.doi.org/10.1002/smll.201400891
  18. C. R. Haughn, E. H. Steenbergen, L. J. Bissell, E. Y. Chen, K. G. Eyink, J. M. O. Zide, and M. F. Doty, "Carrier transfer from InAs quantum dots to ErAs metal nanoparticles." Applied Physics Letters, 105, 103108. (2014). http://dx.doi.org/10.1063/1.4895519
  19. L. R. Vanderhoef, A. K. Azad, C. C. Bomberger, D. R. Chowdhury, D. B. Chase, A. J. Taylor, J. M. O. Zide, and M. F. Doty, "Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy." Physical Review B, 89, 045418. (2014). http://dx.doi.org/10.1103/PhysRevB.89.045418

    20. 2013

  20. Yujun Zhong, Pernell Dongmo, Joshua Zide, "Dilute Bismuthides on an InP Platform." (book chapter) Bismuth-Containing Compounds, Springer Series in Materials Science, Volume 186, pp. 89-116). (2013). http://dx.doi.org/10.1007/978-1-4614-8121-8_4
  21. P. M. Attia, M. R. Lewis, C. C. Bomberger, A. K. Prasad, J. M. O. Zide, "Experimental studies of thermoelectric power generation in dynamic temperature environments." Energy, 60, 453. (2013). http://dx.doi.org/10.1016/j.energy.2013.08.046
  22. Y. Zhong, P. B. Dongmo, L. Gong, S. Law, D. B. Chase, D. Wasserman, and J. M. O. Zide, "Degenerately doped InGaBIAs:Si as a highly conductive and transparent contact material in the infrared range." Optical Materials Express, 3, 1197. (2013). http://dx.doi.org/10.1364/OME.3.001197.
  23. P. Jha, T. D. Sands, P. Jackson, C. Bomberger, T. Favaloro, S. Hodson, J. M. O. Zide, X. Xu, and A. Shakouri, "Cross-plane thermoelectric transport in p-type La0.67Sr0.33MnO3/LaMnO3 oxide metal/semiconductor superlattices." Journal of Applied Physics, 113, 193702 (2013).  http://dx.doi.org/10.1063/1.4804937
  24. C. R. Haughn, K. J. Schmieder, J. M. O. Zide, A. Barnett, C. Ebert, R. Opila, and M. F. Doty, "Quantification of trap state densities in GaAs heterostructures grown at varying rates using intensity-dependent time resolved photoluminescence." Applied Physics Letters 102, 182108 (2013). http://dx.doi.org/10.1063/1.4802841
  25. Cory C. Bomberger, Peter M. Attia, Ajay K. Prasad, Joshua M. O. Zide, "Modeling passive power generation in a temporally-varying temperature environment via thermoelectrics." Applied Thermal Engineering 56, 1-2, 152 (2013). http://dx.doi.org/10.1016/j.applthermaleng.2013.02.039

    26. 2012

  26. I. Marko, Z. Batool , K. Hild , S. Jin , N. Hossain , T. J. C. Hosea , J. P. Petropoulos , Y. Zhong , P. B. Dongmo , J. M. O. Zide , S. J. Sweeney, "Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications." Applied Physics Letters 101, 221108 (2012). http://dx.doi.org/10.1063/1.4768532
  27. R. Kudrawiec, J. Kopaczek, J. Misiewicz, W. Walukiewicz, J. P. Petropoulos, Y. Zhong, P. B. Dongmo, and J. M. O. Zide, "Temperature dependence of E0 and E0+ ΔSO transitions in In0.53Ga0.47BixAs1-x alloys studied by photoreflectance." Journal of Applied Physics 112, 113508 (2012). http://dx.doi.org/10.1063/1.4768262
  28. P. B. Dongmo, Y. Zhong, P. Attia, C. Bomberger, R. Cheaito, J. F. Ihlefeld, P. E. Hopkins, and J. M. O. Zide, "Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs." Journal of Applied Physics, 112, 093710 (2012). http://dx.doi.org/10.1063/1.4761996 
  29. P. Jha, T. D. Sands, L. Cassels, P. Jackson, T. Favaloro, B. Kirk, J. M. O. Zide, X. Xu, and A. Shakouri, "Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices." Journal of Applied Physics, 112, 064714 (2012). http://dx.doi.org/10.1063/1.4754514
  30. L. E. Clinger, G. Pernot, T. E. Buehl, A. C. Gossard, C. J. Palmstrøm, A. Shakouri, and J. M. O. Zide, "Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites." Journal of Applied Physics, 111, 094312 (2012). http://dx.doi.org/10.1063/1.4711095
  31. Y. Zhong, P. B. Dongmo, J. P. Petropoulos, J. M. O. Zide, “Effects of molecular beam epitaxial growth conditions on composition and optical properties of InGaBiAs.” Applied Physics Letters, 100, 112110 (2012). http://dx.doi.org/10.1063/1.3695066
  32. A. T. Ramu, L. E. Clinger, P. B. Dongmo, J. T. Imamura, J. M. O. Zide, and J. E. Bowers. “Incompatability of standard III-V compound semiconductor processing techniques with terbium doped InGaAs of high terbium concentration,” Journal of Vacuum Science and Technology A, 30, 031508 (2012) http://dx.doi.org/10.1116/1.3701951.
  33. E. Selezneva, L. Cassels, A. Ramu, G. Pernot, T. Buehl, T. Favaloro, J. Bahk, Z. Bian, J. Bowers, J. Zide, and A. Shakouri. “Thermoelectric transport in InGaAs with high concentration of rare-earth TbAs embedded nanoparticles.” Journal of Electronic Materials, 41, 1820. (2012). http://dx.doi.org/10.1007/s11664-012-2097-3.

    34. 2011

  34. R. Kudrawiec, J. Kopaczek, J. Misiewicz, J. P. Petropoulos, Y. Zhong, and J. M. O. Zide, “Contactless electroreflectance study of E0­ and E0+ΔSO transitions in In0.53Ga0.47BiXAs1-X alloys,” Applied Physics Letters, 99, 251906. (2011). http://dx.doi.org/10.1063/1.3669703
  35. D. O. Klenov and J. M. O. Zide, “Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy,” Applied Physics Letters 99, 141904 (2011). http://dx.doi.org/10.1063/1.3645632
  36. J. P. Petropoulos, Y. Zhong, P. B. Dongmo, and J. M. O. Zide, “Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material,” Applied Physics Letters, 99 031110 (2011). http://dx.doi.org/10.1063/1.3614476
  37. L. E. Cassels, T. E. Buehl, P. G. Burke, C. J. Palmstrøm, A. C. Gossard, G. Pernot, A. Shakouri, C. R. Haughn, M. F. Doty, and J. M. O. Zide, “Growth and characterization of TbAs:GaAs nanocomposites,” Journal of Vacuum Science and Technology B, 29, 03C114 (2011). http://dx.doi.org/10.1116/1.3555388
  38. J. P. Petropoulos, T. R. Cristiani, P. B. Dongmo, and J. M. O. Zide, “A simple thermodynamic model for the doping and alloying of nanoparticles,” Nanotechnology, 22, 245704 (2011). http://dx.doi.org/10.1088/0957-4484/22/24/245704
  39. V. D. Dasika, A. V. Semichaevsky, J. P. Petropoulos, J. C. Dibbern, A. M. Dangelewicz, M. Holub, P. K. Bhattacharya, J. M. O. Zide, H. T. Johnson, and R. S. Goldman, “Influence of Mn dopants on InAs/GaAs quantum dot electronic states,” Applied Physics Letters, 98, 141907. (2011). http://dx.doi.org/10.1063/1.3567510
  40. A. T. Ramu, L. E. Cassels, N. H. Hackman, H. Lu, J. M. O. Zide, J. E. Bowers, “Thermoelectric transport in the Coupled Valence-Band Model,” Journal of Applied Physics, 109, 033704. (2011). http://dx.doi.org/10.1063/1.3537826

    41. 2010

  41. J. M. O. Zide, J.-H. Bahk, R. Singh, M. Zebarjadi, G. Zeng, H. Lu, J. P. Feser, D. Xu, S. L. Singer, Z.X. Bian, A. Majumdar, J. E. Bowers, A. Shakouri, and A. C. Gossard,” “High efficiency semimetal/semiconductor nanocomposite thermoelectric materials.” Journal of Applied Physics, 108, 123702. (2010). http://dx.doi.org/10.1063/1.3514145
  42. K. J. Russell, F. Capasso, V. Narayanamurti, H. Lu, J. M. O. Zide, A. C. Gossard, “Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport,” Physical Review B, 82, 115322 (2010) http://dx.doi.org/10.1103/PhysRevB.82.115322
  43. J.-H. Bahk, G.H. Zeng, J. M. O. Zide, H. Lu, R. Singh, D. Liang, A.T. Ramu, P. Burke, Z.X. Bian, A.C. Gossard, A. Shakouri, and J. E. Bowers, “High-temperature thermoelectric characterization of III-V semiconductor thin films by oxide binding,” Journal of Electronic Materials, 39, 1125 (2010). http://dx.doi.org/10.1007/s11664-010-1258-5
  44. J.-H. Bahk, Z. X. Bian, M. Zebarjadi, J. M. O. Zide, H. Lu, D. Xu, J. P. Feser, G. Zeng, A. Majumdar, A. C. Gossard, A. Shakouri, J. E. Bowers, “Thermoelectric Figure of Merit of InGaAlAs III-V semiconductor alloys,” Physical Review B, 81, 235209 (2010). http://dx.doi.org/10.1103/PhysRevB.81.235209
  45. A.T. Ramu, L. E. Cassels, N. H. Hackman, H. Lu, J. M. O. Zide, J. E. Bowers, “Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials,” Journal of Applied Physics, 107, 083707 (2010). http://dx.doi.org/10.1063/1.3366712

    46. 2009

  46. M. Zebarjadi, K. Esfarjani, A. Shakouri, J. Bahk, Z. Bian, G. Zeng, J. Bowers, H. Lu, J. Zide, and A. Gossard, "Effect of nanoparticle scattering on thermoelectric power factor," Applied Physics Letters, 94, 202105 (2009). http://dx.doi.org/10.1063/1.3132057
  47. Y.K. Koh, S.L. Singer, W. Kim, J.M. Zide, H. Lu, D.G. Cahill, A. Majumdar, and A.C. Gossard, "Comparison of the 3ω method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors," Journal of Applied Physics, 105, 054303 (2009). http://dx.doi.org/10.1063/1.3078808
  48. R. Singh, Z. Bian, A. Shakouri, G. Zeng, J. Bahk, J.E. Bowers, J.M. Zide, and A.C. Gossard, "Direct measurement of thin-film thermoelectric figure of merit," Applied Physics Letters, 94, 212508 (2009). http://dx.doi.org/10.1063/1.3094880
  49. M. Zebarjadi, K. Esfarjani, A. Shakouri, Z.X. Bian, J. Bahk, G. Zeng, J. Bowers, H. Lu, J. Zide, and A. Gossard, "Effect of Nanoparticles on Electron and Thermoelectric Transport," Journal of Electronic Materials, 38, 954 (2009). http://dx.doi.org/10.1007/s11664-008-0656-4
  50. E.R. Brown, K. Williams, W. Zhang, J.Y. Suen, H. Lu, J. Zide, and A.C. Gossard, "Electrical Transport in a Semimetal–Semiconductor Nanocomposite," IEEE Transactions on Nanotechnology, 8, 402 (2009). http://dx.doi.org/10.1109/TNANO.2008.2011764
  51. J. Lim, W. Lee, H. Sim, R.D. Averitt, J.M. Zide, A.C. Gossard, and J. Ahn, "Effect of nonuniform continuum density of states on a Fano resonance in semiconductor quantum wells," Physical Review B, 80, 035322 (2009). http://dx.doi.org/10.1103/PhysRevB.80.035322

    52. 2008

  52. G. Zeng, J. Bahk, J.E. Bowers, H. Lu, J.M. Zide, A.C. Gossard, R. Singh, Z. Bian, A. Shakouri, S.L. Singer, W. Kim, and A. Majumdar, "Power Generator Modules of Segmented Bi2Te3 and ErAs:(InGaAs)1−x (InAlAs)x," Journal of Electronic Materials, 37, 1786 (2008). http://dx.doi.org/10.1007/s11664-008-0435-2
  53. W. Kim, S.L. Singer, A. Majumdar, J.M. Zide, D. Klenov, A.C. Gossard, and S. Stemmer, "Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures. " Nano Letters, 8, 2097 (2008). http://dx.doi.org/10.1021/nl080189t
  54. A. Azad, R. Prasankumar, D. Talbayev, A. J. Taylor, J. F. O’Hara, R. D. Averitt, J. M. O. Zide, H. Lu, A. C. Gossard. “Carrier dynamics in InGaAs with embedded ErAs nanoislands.” Applied Physics Letters, 93, 121108 (2008). http://dx.doi.org/10.1063/1.2989127
  55. H.-T. Chen, S. Palit, T. Tyler, C. M. Bingham, J. M. O. Zide, J. F. O’Hara, D. R. Smith, A. C. Gossard, R. D. Averitt, W. J. Padilla, N. M. Jokerst, A. J. Taylor. “Hybrid metamaterials enable fast electrical modulation of freely propogating terahertz waves.” Applied Physics Letters, 93, 091117 (2008). http://dx.doi.org/10.1063/1.2978071
  56. M. A. Scarpulla, J. M. O. Zide, J. M. LeBeau, C. G. Van de Walle, A. C. Gossard, and K. T. Delaney. “Near-infrared absorption and semimetal-semiconductor transitions in 2 nm ErAs nanoparticles embedded in GaAs and AlAs.” Applied Physics Letters, 92, 173116 (2008). http://dx.doi.org/10.1063/1.2908213

    57. 2007

  57. G. Zeng, J.-H. Bahk, J. E. Bowers, J. M. O. Zide, A. C. Gossard, Z. X. Bian, R. Singh, and A. Shakouri. “ErAs:(InGaAs)1-x(InAlAs)x alloy power generator modules.” Applied Physics Letters, 91, 263510 (2007). http://dx.doi.org/10.1063/1.2828042
  58. Z. X. Bian, M. Zebarjadi, R. Singh, Y. Ezzahri, A. Shakouri, G. Zeng, J.-H. Bahk, J. E. Bowers, J. M. O. Zide, and A. C. Gossard. “Cross-plane Seebeck coefficient and Lorenz number in superlattices.” Physical Review B, 76, 205311 (2007). http://dx.doi.org/10.1103/PhysRevB.76.205311
  59. H.-T. Chen, W. J. Padilla, J. M O. Zide, S. R. Bank, A. C. Gossard, A. J. Taylor, and R. D. Averitt. “Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices.” Optics Letters, 32, 1620 (2007). http://dx.doi.org/10.1364/OL.32.001620
  60. W. Yi, V. Narayanamurti, J. M. O. Zide, S. R. Bank, and A. C. Gossard. “Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection.” Physical Review B, 75, 115333. (2007). http://dx.doi.org/10.1103/PhysRevB.75.115333
  61. M. P. Hanson, S. R. Bank, J. M. O. Zide, J. D. Zimmerman, and A. C. Gossard. “Controlling electronic properties of epitaxial nanocomposites of dissimilar materials.” Journal of Crystal Growth, 301-302. 4-9. (2007). http://dx.doi.org/10.1016/j.jcrysgro.2006.11.250
  62. D. O. Klenov, J. M. O. Zide, J. M. LeBeau, A. C. Gossard, and S. Stemmer. “Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers.” Applied Physics Letters, 90, 121917. (2007). http://dx.doi.org/10.1063/1.2715174
  63. G. Zeng, J. M. O. Zide, W. Kim, J. E. Bowers, A. C. Gossard, Z. X. Bian, Y. Zhang, A. Shakouri, S. L. Singer, and A. Majumdar. “Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattice.” Journal of Applied Physics, 101, 034502 (2007) http://dx.doi.org/10.1063/1.2433751

    64. 2006

  64. J. M. O. Zide, D. Vashaee, Z. X. Bian, G. Zeng, J. E. Bowers, A. Shakouri, and A. C. Gossard. “Demonstration of electron filtering to increase the Seebeck coefficient in ErAs:InGaAs/InGaAlAs superlattices.” Physical Review B, 74, 205335 (2006). http://dx.doi.org/10.1103/PhysRevB.74.205335
  65. H. -T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt. “All Solid State Terahertz Metamaterial Devices.” Nature, 444, 597 (2006) http://dx.doi.org/10.1038/nature05343
  66. J. F. O'Hara, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt. “Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices.” Applied Physics Letters, 88, 251119 (2006). http://dx.doi.org/10.1063/1.2216026
  67. W. Kim, S. L. Singer, A. Majumdar, D. Vashaee, Z. X. Bian, A. Shakouri, G. Zeng, J. E. Bowers, J. M. O. Zide, and A. C. Gossard. “Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices.” Applied Physics Letters, 88, 242107 (2006). http://dx.doi.org/10.1063/1.2207829
  68. J. M. O. Zide, A. Kleiman-Shwarsctein, N. C. Strandwitz, J. D. Zimmerman, T. Steenblock-Smith, A. C. Gossard, A. Forman, A. Ivanovskaya, and G. D. Stucky.  “ Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction.” Applied Physics Letters, 88, 162103 (2006). http://dx.doi.org/10.1063/1.2196059
  69. G. Zeng, J. E. Bowers, J. M. O. Zide, A. C. Gossard, W. Kim, S. Singer, A. Majumdar, R. Singh, Z. X. Bian, Y. Zhang, and A. Shakouri. “ErAs:InGaAs/InGaAlAs superlattice thin-film power generator array.” Applied Physics Letters, 88, 113502 (2006). http://dx.doi.org/10.1063/1.2186387
  70. W. Kim, J. M. O. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar. “Thermal Conductivity Reduction and Thermoelectric Figure of Merit Increase by Embedding Nanoparticles in Crystalline Semiconductors.” Physical Review Letters, 96, 045901 (2006). http://dx.doi.org/10.1103/PhysRevLett.96.045901

    71. 2005

  71. J. M. Zide, D. O. Klenov, S. Stemmer, A. C. Gossard, G. Zeng, J. E. Bowers, D. Vashaee, and A. Shakouri. “Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles.” Applied Physics Letters, 87, 112102 (2005). http://dx.doi.org/10.1063/1.2043241
  72. D. O. Klenov, J. M. Zide, J. D. Zimmerman, A. C. Gossard, and S. Stemmer. “Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs.” Applied Physics Letters, 86, 241901 (2005). http://dx.doi.org/10.1063/1.1947910
  73. R. P. Prasankumar, A. Scopatz, D. J. Hilton, A. J. Taylor, R. D. Averitt, J. M. Zide, and A. C. Gossard. “Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy.” Applied Physics Letters, 86, 201107 (2005). http://dx.doi.org/10.1063/1.1923174